Monolithic Integrated AlGaN/GaN Power Converter Topologies on High‐Voltage AlN/GaN Superlattice Buffer
نویسندگان
چکیده
Semiconductor Superlattices The picture shows a monolithic power converter, fabricated in lateral AlGaN/GaN-on-Si process on an improved AlN/GaN super-lattice buffer epitaxy. reduces vertical leakage and back-gating effects compared to step-graded buffers. This integration technology allows 98.8% efficient dc-dc conversion single chip. More details can be found article number 2000404 by Stefan Moench co-workers.
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ژورنال
عنوان ژورنال: Physica Status Solidi A-applications and Materials Science
سال: 2021
ISSN: ['1862-6300', '1862-6319']
DOI: https://doi.org/10.1002/pssa.202170014